EpiNex® Engineered Wafers

Engineered Silicon.
More Power for Longer.

Ultra-thin silicon wafers with engineered doping profiles designed to improve radiation resilience and preserve solar cell performance throughout a satellite mission.

Square EpiNex® silicon cell photographed by NexWafe

01

Radiation Resilience

Improved efficiency retention demonstrated in electron and proton testing.

02

Smaller, Lighter Arrays. Longer Missions.

Improved radiation resilience can enable smaller, lighter solar arrays for a given end-of-life power requirement, or potentially extend mission life with the same array size.

03

Scalable Manufacturing

Direct gas-to-wafer production without conventional ingot growth or wire sawing.

Demonstrated radiation performance

Engineered Wafers. Higher End-of-Life Power.

Measured Cell Efficiency

Absolute solar cell efficiency before and after accelerated 5 MeV proton testing: engineered EpiNex® wafers versus conventional CZ silicon.

Absolute Cell Efficiency (AM1.5)14%16%18%20%22%24%22.2%16.8%−24.4%CZ Control(Uniform Doping)20.8%16.8%−19.3%EpiNex®(Uniform Doping)20.9%18.0%−14.3%EpiNex®(Graded Doping)
Before irradiation (BOL)After irradiationGraded EpiNex® after irradiation

Engineered Doping Gradients Improve Radiation Resilience

Following accelerated 5 MeV proton testing, graded EpiNex® cells achieved 18.0% efficiency, compared with 16.8% for both uniformly doped CZ and EpiNex® controls.

Test context: Results are from experimental mini-cell coupons developed for comparative radiation testing, not optimized commercial-size solar cells. The relevant comparison is relative radiation-induced degradation and post-irradiation efficiency under identical test conditions.

Test conditions: 5 MeV protons, fluence 5 × 10⁹ p/cm². Efficiencies measured under AM1.5 illumination.
Degradation percentages represent relative efficiency loss from BOL.

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