Technology roadmap
The pathway to 35% efficiency
Join us on the journey towards revolutionary new wafer materials.
The EpiNex™ n-Type Wafer
- Highly efficient, epitaxially-grown n-type silicon wafers
- 120-140 μm drop-in replacement
- Offering superior wafer quality at highly competitive prices
Achieving 23% - 24% cell efficiency
2021
The EpiNex Thin-Wafer
- Compatible with heterojunction, TopCON and IBC Cell lines
- Rapid technology diffusion enabled through strategic partnerships
- Preparing high-volume production at gigawatt scale
- Gradient-doped advanced material supply
Up to 26% cell / 24.5% module efficiency
2024
EpiNex Advanced Material
- Thickness lowered to below 100 μm
- Continuous composition material variation, including SiGe layers / substrates
Achieving 30% cell efficiency
2026
EpiNex Tandem
- SiGe and III/V Tandem solar cells
- Unlocking the availability of ultra-high efficiency cells to mass markets
Achieving 35%+ efficiency
2030