The Epinex product roadmap
Epinex M6
Our high quality drop-in replacement to current cell and modules lines. The Epinex M6 offers our customers exceptional value and improve material properties, increasing cell efficiency.
Coming 2022
Epinex G12
The Epinex G12 paves the way for a smooth transition to 210mm, leveraging the NexWafe Epitaxy process for uniform deposits on 2x2 seed wafers. Meeting new industry standards has never been easier.
Coming 2023
The future of high-efficiency photovoltaic cells and modules
Ultra-thin wafers
NexWafe's multi-patented proprietary manufacturing process ensures EpiNex wafers are manufactured with precise thickness tolerances. EpiNex are high-efficiency, fully compatible drop-in replacements for cells produced by today’s high-efficiency HJT, Topcon and IBC manufacturing processes.
NexWafe has successfully demonstrated a world record-beating ability to detach 50 micron wafers – roughly the diameter of a human hair, and less than one-third the thickness produced by conventional processes.
By 2024, we are on track to start high volume manufacturing of ultra-thin wafers, less than 90 microns in thickness.
Scalable low-cost production
NexWafe’s in-line Epitaxy process uses 70% less energy than conventional methods. Because EpiNex ™ wafers are ultra-thin, they have a higher voltage than traditional Czochralski (Cz) process wafers. As a result, EpiNex wafers produce more watts per gram of silicon than any other wafers available today.
We’re on track to reach 26% efficiency using monolithic silicon-only cell processes.
Low carbon footprint
Preparing for a low carbon future, NexWafe’s production processes result in 70% reduction in carbon dioxide. This means more than 6 million tons of carbon dioxide saved for every 10GW of wafers produced annually.
The future value of carbon credits is predicted to reach $60 per ton of avoided emissions. Looking ahead, a large manufacturing facility using EpiNex™ technology would be capable of generating more than $360M a year in carbon credits.
Reducing silicon waste
NexWafe’s innovative silicon epitaxial manufacturing technique sees starting materials directly transformed to finished product. Wasteful intermediate steps, such as shaping and sawing ingots, are completely eliminated.
Conventional methods see 45% of silicon recycled or discarded. Using our proprietary one-step process offers game-changing efficiency, with 95% of silicon preserved in the final product.
Superior size-agnostic manufacturing
NexWafe’s EpiNex™ process accommodates a range of wafer sizes and uses continuous in-line deposition on large size carriers to create an array of high-efficiency monocrystalline silicon wafers.
Record beating
Ultra-flexible wafers
NexWafe has demonstrated detachability down to 60 microns in thickness, providing ultra-flexible wafers that conform to the underlying surface with two separate radiuses of curvature.
Today and tomorrow
Expanding the reach of solar energy
Within the next decade, NexWafe is on track to perfect the EpiNex™ – gallium arsenide (GaAs) tandem wafer. By directly bonding a layer of silicon to a layer of gallium arsenide, NexWafe will create ultra high-efficiency cells for mass markets – meeting future societies' increased demand for solar power.